Optical matrix element in InAs∕GaAs quantum dots: Dependence on quantum dot parameters
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چکیده
منابع مشابه
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters
We present a theoretical analysis of the optical matrix element between the electron and hole ground states in InAs/GaAs quantum dots QDs modeled with a truncated pyramidal shape. We use an eight-band k·p Hamiltonian to calculate the QD electronic structure, including strain and piezoelectric effects. The ground state optical matrix element is very sensitive to variations in both the QD size an...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2005
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2130378